The electrical properties of Ti/p-Si interfaces damaged by CHF3/O-2 plasma treatments were investigated as a function of annealing temperature. The Schottky barrier height of plasma-exposed interface increased with increasing rf power density during plasma treatment. It was found that the current transport mechanism of plasma-exposed interface changes as the annealing temperature increases. The current transport mechanism in the sample with plasma treatment is due to thermionic emission in cooperation with recombination in the depletion region in the sample annealed at 400 degreesC. The possible mechanism in the sample annealed at 500 degreesC is multistep tunneling. Meanwhile, thermionic-emission current dominates in the as-deposited state. By contrast, the dominant current was due to thermionic emission and did not change against the annealing temperature in the samples with clean interfaces. As a result, the change in the current transport mechanism could be due to plasma-induced defects and to the formation of Ti5Si3 at the Ti/Si interface.