The feasibility of SiNx films prepared by catalytic chemical vapor deposition (Cat-CVD) at low substrate temperatures was studied for passivation of ferroelectric non-volatile random access memories (FRAMs). First, the influence of exposure to active NH3 gas generated by the heated catalyzer on ferroelectric Pb(Zr0.52T0.48)O-3 (PZT) capacitors was examined. Second, SiNx films were prepared by Cat-CVD at low substrate temperature, at which the ferroelectricity of PZT is not degraded. The ferroelectric degradation of PZT capacitors due to exposure to active NH3 gas strongly depended on the sample temperature and the ambient. However, no degradation occurred when keeping the sample temperature below 200 degreesC at an ambient of 1.3 Pa by controlling the heat flow from the catalyzer. By adjusting the flow rate ratio of SiH4/NH3, the refractive index of SiNx films measured by ellipsometry was controlled to be 2.0 for various substrate temperatures. The dense SiNx films, which were resistive to oxidation in air exposure, were prepared at 200 degreesC at an ambient of 1.3 Pa. The ferroelectric PZT capacitors were not degraded during SiNx film deposition using the Cat-CVD method. The results appeared to demonstrate the feasibility of application of Cat-CVD films to passivation of ferroelectric devices.