The beneficial effect of post-annealing on the properties of lead-strontium-titanate (PST) thin films prepared by liquid source misted chemical deposition are reported. Their composition and depth profile were uniform. The dielectric constant and dielectric loss of the 100-nm-thick Pb0.32Sr0.68TiO3 film annealed at 650 degreesC for 5 min in air and annealed further at 630 degreesC for 30 min after top electrode deposition were 560 (equivalent oxide thickness = 0.70 nm) and 0.0173, respectively. Especially, the leakage current density was greatly influenced by post-heat treatment in O-2 and N-2 ambient gas after the top Pt electrode was deposited on a PST thin film. The leakage current density of 1.85 X 10(-8) A/cm(2) at 1 V was obtained after the 130-nm-thick PST thin film was treated by inductively coupled plasma (ICP).