New class of the quaternary Ti-Si-C-IN coatings obtained by chemical vapor deposition with TiCl4, SiCl4, C2H2, H-2, N-2, and Ar as the reaction sources have been developed and examined in this study. The deposited Ti-Si-C-N coatings have a non-stoichiometric titanium carbide (TiC) structure with Ti and C partially substituted by Si and N, respectively. These deposits can thus be expressed as (Ti,Si)(C,N). These coatings are composed of 25-45 at. % Ti, 7-25 at.% Si, 30-45 at.% C, and 8-15 at.% N. The deposition conditions for this quaternary system were chosen from the deposition study of TiN. The growth rates of the Ti-Si-C-N coatings basically increase with the flow rates of TiCl4 and SiCl4. Most of the surface morphologies of the Ti-Si-C-N coatings are rounded hillocks. Although different conditions generate coatings with a similar surface rnicrostructure, the microstructural texture, composition and hardness change in a complex way with the flow rates of TiCl4, SiCl4 and C2H2. We have demonstrated promising mechanical property in the Ti-Si-C-N coatings with a hardness value of 26.5 GPa.