Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350 degreesC at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to reference SnO2:F (Asahi U-type). At higher substrate temperature and with growing thickness, the surface roughness of the ZnO films increases. Layers with electrical (sheet resistance < 10 /rectangle), optical (transmittance > 80%) and morphological (surface texture) properties comparable to Asahi U-type SnO2:F have been obtained. Preliminary solar cells deposited on ZnO show an efficiency approaching 10%.