We present a study of As carry-over in GaInAs/InP and GaInAs/GaInAsP double-hetero and multi-quantum well structures, grown by low pressure metal organic vapor phase epitaxy. Structures were characterized by secondary ion-mass spectroscopy and high-resolution X-ray diffraction measurements. In particular, our X-ray diffraction measurements on GaInAs/InP multi-quantum well structures provide an evaluation of the As background in the InP barriers, as well as its distribution across the wafer. We compared the use of standard hydrides with alternative organo-group-V sources. We confirmed that As carry-over is considerably reduced under usual growth conditions applying organoarsenic sources. This is primarily attributed to the lower As partial pressure (lower V/III ratio) used with alternative sources. Similar results are obtained from growth with hydrides at considerably lower As partial pressures than normal, although with some differences concerning the As distribution across the wafer and less photoluminescent efficiency.