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Thin Solid Films, Vol.392, No.1, 1-10, 2001
Incorporation of the doping elements Sn, N, and P in CuInS2 thin films prepared by co-evaporation
The incorporation of the doping elements N, P, and Sn as well as the impact of these elements on electrical properties of co-evaporated CuInS2 thin films is studied. We show that by using a radical source for nitrogen, this element can be incorporated. Electrical activity of the nitrogen acceptor, however, could not be verified. The incorporation of Sn is critical for high substrate temperatures. We will describe how this problem can be circumvented. Incorporation of P was only possible in the presence of Sn atoms.