beta-FeSi2 and FeSi layers were grown on Si substrates by deposition of Sb-related intermetallic compounds and simultaneous reaction with Si substrates. Higher quality epitaxial beta-FeSi2 layers with smooth interfaces were obtained on the Si(111) substrates at the substrate temperatures ranging from 650 to 700 degrees C in comparison to the layers grown by conventional reactive deposition epitaxy (RDE). Moreover, the growth mechanism of FeSi and Sb-related intermetallic compounds have been discussed.