Thin Solid Films, Vol.369, No.1-2, 213-216, 2000
Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantation
A composition window of x < 0.3 was found for which a good SiGe-on-insulator (SiGe-OI) substrate can be obtained by low-energy implantation of oxygen ions (25 keV O+) onto a pseudomorphic Si1-xGex/Si(001) alloy. Both the surface oxidation of SiGe during postimplant annealing and the thermally induced instability of SiGe alloys were found to be limiting factors influencing the composition window.