화학공학소재연구정보센터
Thin Solid Films, Vol.354, No.1-2, 262-266, 1999
Raman scattering from BaTiO3 thin film prepared on silicon substrate by r.f. sputtering
BaTiO3 thin film with average size of 50 nm was prepared on crystalline silicon substrate by r.f.-magnetron sputtering. X-ray diffraction indicated that the thin film was tetragonal phase with (c/a) = 1.0068. Variable-temperature Raman spectroscopy showed the thin-film Curie temperature increased evidently, relative to BaTiO3 ceramics, by the observation of tetragonal bands at 305 and 720 cm(-1) which were retained even at 275 degrees C. The stress in the thin film was measured to investigate the mechanism of the stabilization of tetragonal BaTiO3.