Epitaxial growth of PbSe/PbEuSe/BaF2/CaF2 heterostructures was carried out by a molecular beam epitaxy on Si(111) wafers. Successful transfer of 3-mu m thick PbSe/PbEuSe epilayers was accomplished by bonding the MBE-grown samples face down to polished copper plates followed by the removal of the silicon substrate by dissolving the BaF2 buffer layer in water. Nomarski microscopy and surface profile characterization showed that the transferred PbSe/PbEuSe layer had mirror-like morphology. High-resolution X-ray diffraction measurements demonstrated that the PbSe/PbEuSe epilayers maintained high crystalline quality after transfer, and surface analysis by X-ray photoelectron spectroscopy indicated complete removal of BaF2 buffer layer. The above results indicate that bonded PbSe/PbEuSe could be used as a new substrate material for regrowth of high quality PbSe-related heterostructure devices.