In2O3 thin films have been prepared from commercially available pure In2O3 powders by high vacuum thermal evaporation (HVTE) and from indium iso-propoxide solutions by sol-gel techniques (SG). The films have been deposited on sapphire substrates provided with platinum interdigital sputtered electrodes. The as-deposited HVTE and SG films have been annealed at 500 degrees C for 24 and I h, respectively. The film morphology, crystalline phase and chemical composition have been characterised by SEM, glancing angle XRD and XPS techniques. After annealing at 500 degrees C the films' microstructure turns from amorphous to crystalline with the development of highly crystalline cubic In2O3-x (JCPDS card 6-0416). XPS characterisation has revealed the formation of stoichiometric In2O3 (HVTE) and nearly stoichiometric In2O3-x (SG) after annealing. SEM characterisation has highlighted substantial morphological differences between the SG (highly porous microstructure) and HVTE (denser) films. All the films show the highest sensitivity to NO2 gas (0.7-7 ppm concentration range), at 250 degrees C working temperature. At this temperature and 0.7 ppm NO2 the calculated sensitivities (S = R-g/R-a) yield S = 10 and S = 7 for SG and HVTE, respectively. No cross sensitivity have been found by exposing the In2O3 films to CO and CH4. Negligible H2O cross has resulted in the 40-80% relative humidity range, as well as to I ppm Cl-2 and 10 ppm NO. Only 1000 ppm C2H5OH has resulted to have a significant cross to the NO2 response.