The mechanism of incorporation of metallic antimony in amorphous and glassy samples of the SbxSe1-x (0 less than or equal to x less than or equal to 0.10) system is studied by measuring the xerographic discharge characteristic, drift mobility and optical absorption. It is observed that the addition of antimony increases the DC conductivity, decreases the electron mobility, changes the xerographic parameters and decreases the optical gap of the system. The Compositional dependence of the electronic properties are related to the defect states produced due to incorporation of Sb atoms in glassy selenium matrix.