Ruthenium-doped InP (InP:Ru) has been grown by low-pressure hydride vapor-phase epitaxy (LP-HVPE) using bis(eta (5)-2,4-dimethylpentadienyl)ruthenium(II) as precursor. Ruthenium concentrations in the range 2 x 10(15) to 2 x 10(18) cm(-3) have been achieved. The Ru incorporation has been studied in terms of incorporation flux, and it is shown that the growth rate limits: the incorporation rate. From current-voltage measurements on n-InP/InP:Ru/n-InP and p-InP/InP:Ru/p-InP structures, resistivities greater than 10(3) Omega cm and greater than 10(10) Omega cm have been obtained, respectively.