Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band. It is shown that the growth kinetics for low Cu(II) concentrations are consistent with progressive nucleation of hemispherical clusters followed by diffusion-limited growth.