Journal of the Electrochemical Society, Vol.147, No.6, 2347-2349, 2000
Persistent photoconductivity of low temperature grown AlGaAs prepared by intermittent injection of (CH3)(3)Al/(CH3)(3)Ga/AsH3
The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 10(15) cm(-3), a new current-dependent PPC also was observed at around 25 K.