The effects of hydrogen annealing on lead glass/silicon systems with negative charges N have been studied. It was found that a positive shift in the negative N contributed to decreasing the leakage current of mesa-type glass passivated p-n junction and that a PDZ (Pb denuded zone) was formed at the glass surface bl, hydrogen annealing. A high selective catalyst Pd deposition method prior to electroless Ni plating was established by removing catalyst poison Pb lumps at the glass surface and has succeeded in high-quality electroless Ni plating of surface mounted diode.