This paper, Part II of this series of two articles, is devoted to two-dimensional modeling of silicon nitride low pressure chemical vapor deposition from a silane-ammonia mixture. In that aim, the CVD2 model previously developed in our laboratory, which takes into account hydrodynamics, mass transport, and chemical reactions, is adapted to this special kind of deposition. The gas phase mechanism described in Part I is integrated in the model. The concentration profiles of NH3, SiH4, SiH2, SiHNH2, SiH3NH2, and H-2 have been computed and the contribution of the different species to deposition rate have been evaluated. The results obtained confirm the importance of the entrance zone length of the reactor, which conditions the formation of the stable species SiH3NH2, generating SiH2 and SiHNH2, which are responsible for the strong overthicknesses observed at the wafer periphery.