Effective pattern transfer into PrBaCaMnO3 and LaSrMnO3 has been achieved using Cl-2/Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 Angstrom min(-1) for LaSrMnO3 and 300 A min for PrBaCaMnO3 were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 mu m) features have been produced in both materials using SiNx as the mask.