A buried poly-CoSi2 layer under a thin monocrystalline Si film has been successfully fabricated using wafer bonding and hydrogen-induced delamination techniques. A Co and Si deposited wafer was brought into contact with a hydrogen-implanted wafer at room temperature. During annealing in N-2 ambient, the hydrogen-implanted wafer was split at the projected range of the implanted proton, remaining a thin monocrystalline Si layer bonded to the other wafer, and the buried CoSi2 layer was also formed through solid-phase reaction. The electrical properties of the Si/CoSi2/Si structure after different rapid thermal anneal treatments were studied by spreading resistance probe and current voltage measurements.