Polishing of low dielectric constant (low k) organic layers of polyarylether (poly-AE) has been studied. Removal rate of poly-AE is 52 nm/min in polishing by MnO2 slurry at pressure of 163 g/cm(2). This rate is 4.2 times greater than that achieved by fumed silica slurry. This rate increase is due to the enhancement of chemical polishing through employing a chemically active slurry of MnO2. Removal rate for tantalum nitride (TaN) barrier is 97 Nn/min in MnO2 slurry. This rate is much greater than the 44 nm/min achieved by fumed silica slurry. Although many deep scratches are formed at the surface of the poly-AE layer by the polishing of fumed silica slurry, no deep scratches are found at the surface polished by MnO2 slurry.