Bottom anti-reflective coatings (BARC) are useful to suppress the problems associated with reflection by the substrate during the lithographical processing. Now, we have proposed a new class of BARC material containing polyvinylphenol as a W-absorber, poly(3,3'-dimethylpropene) (PDMP) as a crosslinker, and 2-hydroxycyclohexyl p-toluenesulfonate as a thermal acid generator. The PDMP was synthesized from acrolein by a two-step sequence reaction with a yield of 60%. The lithographic performance of photoresist with BARC that was proposed by us was evaluated and compared with those of photoresist without BARC.