Epitaxial LaNiO3(LNO) thin films were deposited on Si(100) substrates by pulsed laser deposition. (100)-oriented films, without any other orientations, were obtained by using an intermediate double layer of CeO2/YSZ. We studied the influence of substrate temperature and oxygen pressure on the crystal structure and room temperature electrical resistivity of LNO films. Optimal processing conditions allow the growth of LNO films with surface morphology, crystal structure and electrical properties suitable for the use of the conductive layer as an electrode in ferroelectric capacitors.