CrSi2 layers were synthesized on Si wafers by high current pulsed Cr ion implantation into Si wafers with or without a pre-deposited thin Cr overlayer. For the bare Si wafers, at a substrate temperature of 220 degreesC, the plain and continuous CrSi2 layers were successfully obtained, while at 300 degreesC, some voids emerged in the formed layers. Interestingly, for the Si wafers with a Cr overlayer, Cr ion implantation induced the growth of surface fractal consisting of the CrSi2 grains. It was found that the fractal dimension was independent of the substrate temperature and increased approaching a Value of 2.0 with increasing ion dose.