A novel UV-assisted metal-induced crystallization method is reported. A 1000-Angstrom -thick amorphous silicon film is deposited onto a 150-mum-thick glass substrate at a temperature of 400 degreesC using electron beam evaporation. A 50-Angstrom -thick Ni layer is then e-beam deposited to act as the crystallization seed. UV exposure is exploited as an external source of energy to lower the re-crystallization temperature during post-treatment at 400 degreesC. Samples exposed to UV during this post-treatment show crystalline structure as confirmed with XRD and SEM analyses, while samples annealed without UV exposure remain amorphous.