Electrical-current-induced joule heating was applied to the crystallization of silicon films formed on glass substrates. Electrical energy accumulated at a capacitance was applied to the silicon films. Coincident irradiation with 30-ns-pulsed laser melted films partially reduced their resistance. Complete melting of 42 mus and solidification duration of 28 mus were observed in the case of heating at a capacitance of 2 muF The analysis of electrical conductivity reveled a density of defect states of 1.3 x 10(12) cm(-2) at grain boundaries. The formation of 15-mum crystalline grains was observed. The preferential crystalline orientation was (110).