The patterned, selective electroless deposition of submicron metal features has been achieved on Si by using a channel-constrained technique. Chemically-amplified negative tone photoresists, exposed with UV or e-beam sources, were developed to create patterned channels for constrained, additive, metal growth on an underlying ligating self-assembled monolayer film. The process is attractive for the production of plasma etch-resistant high resolution metal features for VLSI applications, as well as for the fabrication of high aspect ratio metal lines useful as electrical interconnects. The adhesion of the photoresist to the underlying monolayer plays a critical role in the process, permitting the removal of photoresist residues from patterned channels during development to allow metallization without the loss of feature critical dimension control or photoresist delamination. Patterned, etched metal features with linewidths to similar to 0.1 mum have been demonstrated.