Pendeo-epitaxial growth of AlxGa1-xN thin films has been achieved on stripes etched in a GaN seed layer on 6H-SiC(0001) substrates using metallorganic vapor phase epitaxy. Fully coalesced thin films have been characterized for a comparison study with conventional grown AlxGa1-xN thin films using scanning electron microscopy, X-ray diffraction, and high resolution scanning Auger microprobe. A FWHM of 794 arcsec has been measured for pendeo-epitaxially grown Al10Ga90N films, which is comparable to conventional grown films on 2H-AlN/6H-SiC substrate. A variation of 1% in the atomic Al content of Al10Ga90N thin films related to the microstructure has been measured.