P-channel UMOS IGBTs in 6H Silicon Carbide were fabricated and characterized for temperatures ranging from room temperature to 400 degreesC. These devices exhibited much higher reliability at high temperature than typically observed for SiC n-channel MOSFETs. A blocking voltage of 400 V was measured for a 0.02 cm(2) device at room temperature. Differential specific on-resistance (R-on,R-sp) at V-g = -30 V and V-CE = -5 V is measured to be 431. m Omega -cm(2) at room temperature, which decreases to 80 m Omega -cm(2) at 400 degreesC. A collector current of 2.0 A was measured at 400 degreesC for a 0.02 cm(2) IGBT.