4H-SiC GTOs and P(+)iN diodes have been fabricated and characterized. Mesa termination and floating guard ring termination have been used for the fabrication of GTOs with 7 mum 7.2x10(15)cm(-3) doped p-blocking layer and 13 mum 2.1x10(15)cm(-3) p-blocking layer, respectively. Characterization results will be reported. Switching measurements at high temperatures will also be reported which allows the determination of minority carrier lifetime and its temperature dependence in the p-base region of the GTO. For planar P(+)iN diode fabrication, single zone implantation into a 30 mum 1x10(15)cm(-3) doped n-type epilayer along with three-step JTE etching have been performed.