Silicon carbide is emerging as a superior material for semiconductor devices for applications that require high power operation at high temperature, radiation and chemically harsh environments. Besides the material properties of wide band-gap, high breakdown electric field, good thermal conductivity and carrier saturation velocity, SiC devices have been observed to display other useful properties that make them suitable for high current applications. This is especially true for bipolar devices where SIC can be used at high frequencies prohibited for silicon devices by large carrier storage and the consequent switching losses. SiC p-n diodes display a much reduced reverse recovery charge than silicon p-n diodes. Only a slight variation with forward current and temperature further improve their advantages. From this standpoint, the performance of the SiC diodes in applications that subject them to transient stresses must be studied.