Materials Science Forum, Vol.338-3, 1283-1286, 2000
Effect of off-angle from Si (0001) surface and polytype on surface morphology of SiC and C-V characteristics of SiC MOS structures
We have investigated the relationship between the surface morphologies of 3.5 degrees and 8 degrees off-angled 6HSiC (0001) and 8 degrees off-angled 4H-SiC (0001) substrates and the C-V characteristics of SiC MOS structures. C-V characteristics and atomic force microscopy (AFM) observations revealed that the D-it and the step height increased with increasing the off-angle. It is considered that these contribute to origins of low channel mobility for 4H-SiC MOSFETs.