We have developed a low pressure chemical vapor deposition (LPCVD) method and successfully obtained layers with atomically flat surfaces. We fabricated Schottky barrier structures using these epilayers and investigated the junction properties by measuring current-voltage (I-V) characteristics. We obtained excellent Schottky barrier junctions with the ideality factor of 1.11 and the reverse breakdown voltages of 240 V, which is two orders of magnitude higher compared with that of atmospheric pressure CVD (APCVD) epilayers.