A simple edge termination based on oxide ramp profile around the Schottky contact is used on Ni Schottky rectifier fabricated on a 2.7x10(16)cm(3) n-type 6H-SiC epilayer. Three anneals of the Schottky contacts were experimented. The diodes annealed at 900 degreesC showed excellent reverse characteristics with a nearly ideal breakdown at about 800V. Forward characteristics follow thermionic emission theory with ideality factor nearly one.