Ohmic contacts to 6H-SiC have been improved in several points such as contact resistivity, surface morphology, depth profiles, and process temperature. Both W/Ti contacts for n-type and Al/Ti contacts for p-type 6H-SiC have been fabricated with excimer pulsed laser irradiation to the metal-deposited substrates at room temperature. Properties of laser-processed contact have exceeded those of the ordinary annealed contacts. Very thin ohmic contact layers with smooth surface morphology have been obtained by this technology.