Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering / channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 degreesC and 1700 degreesC. The use of a pre-anneal process at 1000 degreesC before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 degreesC.