In Sc-doped 6H-SiC epitaxial layers we observed several different electron paramagnetic resonance (EPR) spectra with a Sc-45 hyperfine interaction pattern. The spectra are explained as being due to the isolated Sco (S = 1/2) acceptor on carbon sites but with different microscopic configurations. The spectra show a pronounced temperature dependence. At low temperatures the hole of the Sco acceptor is located in a Sco-Si bond either along the (c) over bar -axis forming an axial centre or along one of the 3 other C-SI bonds giving rise to a monoclinic centre. At higher temperature the hole changes place rapidly between the three Sc-Si bonds resulting in an axial centre. Air three Sco hole configurations have different ionisation levels. The ionization level of the low temperature monoclinic - high temperature axial centre is significantly influenced by an entropy term. In 4H-SiC spectra were only observed from a single Sco centre with monoclinic symmetry.