We report improved measurements of the high-field drift velocity of electrons parallel to the basal plane in 4H and 6H-SiC as a function of temperature. The electron saturation drift velocity at room temperature is 1.9(2.2) x10(7) cm/s in 6H(4H) SiC. At 320 degreesC the electron saturation drift velocity is 1.0(1.6) x10(7) cm/s in 6H(4H) SiC.