Spreading resistance (SR) measurements on Al implanted 6H-SiC samples have been carried out after different surface treatments. Methods like polishing with diamond emulsion, annealing steps and ion sputtering of the surface have been used. After surface sputtering with 2 keV Ar+ ions the measured resistance was reduced more than one order of magnitude compared to measurements after beveling. The measured profiles are discussed in correlation to SIMS profiles.