We report a study on the V4+/V3+ deep acceptor level in non intentionally vanadium doped 6H and 4H n-type SiC grown by the Lely modified method using Optical Absorption (OA) and Deep Level Optical Spectroscopy (DLOS). Comparison of DLOS and OA spectra measured on 6H and 4H substrate allows us to identify OA lines and DLOS resonance band as V3+ infernal transition between the ground state (3)A(2) to excited states. We deduce the V3+ configuration in the 6H and the 4H-SiC band gap with energetic positions. Some of the DLOS spectra thresholds are interpreted as transition from the V3+ ground level to the successive conduction band minima.