We propose new methods of SiC growth and doping; "Vertical hot-wall type CVD" for higher growth rate and lower background impurity, and "Pulse doping" for well-controlled doped layer. The CVD reactor was equipped with a graphite crucible in which the substrate was set surface-down. High growth rate of 15 mu m/hr was obtained at 1700 degreesC. The background impurity concentration of the undoped epitaxial layer was less than 10(14) cm(-3). A pulse valve, which could open and close within very short period less than 10 mu s, was used to supply the dopant gases. Carrier concentrations of the doped layers were precisely controlled, and abrupt doping profiles were achieved by "Pulse doping".