Within the past year we have grown SiC boules and produced wafers of 25, 35, 41, 50, 75 and 100 mm diameter in custom-designed physical vapor transport (PVT) furnaces. By synthesizing high purity SiC source material, controlling defect introduction during growth initiation, and optimizing hot zone geometry, we have increased the monocrystalline area in 50 to 100 mm substrates and have reduced micropipe densities in our 35 mm and 41 mm substrates to below 300 cm(-2).