The dry etching characteristics of ZnO using an inductively couple plasma (ICP) have been investigated, for the first rime, as functions of plasma chemistry, radio frequency (rf) table power, and ICP power. The CH4/H-2 etchant gases resulted in the highest etch rate of ZnO, suggesting that the etching of Zn in ZnO largely involves a process in which a volatile metallorganic zinc compound, such as Zn(CH3)(gamma) is formed. The etch rate was increased with increasing rf table power, and the highest etch rate of 2000 Angstrom /min was achieved at an rf table power of 200 W (dc bias: -80 V). As the ICP power was increased, the etch rate also increased, which suggests that the plasma density is also an important factor in this process. Furthermore, it was observed that hydrogen-containing plasma etching enhances the band-edge photoluminescence of the ZnO film. (C) 2000 The Electrochemical Society. S0013-4651(00)02-099-1.All rights reserved.