In this work, a 300 mus pulsed Nd:YAG laser was employed to induce indium diffusion in silicon wafer. Electrical properties were studied for a range of laser pulse energies (0.225-0.369 J) and substrate temperature (300-398 degreesk). The four point probe measurements showed that a minimum sheet resistance (54 Omega/square) was resulted at the melting threshold energy and room temperature. The sheet resistance was a decreasing function of the temperature rise of the substrate. The (I-V) and (C-V) measurements expressed improvement in the characteristics of the fabricated diodes when substrate temperature rises and irradiating pulse energy increases up to melting threshold value after which these characteristics starts to deteriorate.