AC electrical properties of 410 nm thick 30 at.wt% Cu-70 at.wt% GeO2 thin films are reported for the frequency range 10(4) to 10(6) Hz and temperature range 150 to 425 K. The loss tangent (tan delta) and the dielectric loss (epsilon"/epsilon (o)) are found to show striking minima around a cut-off frequency similar to 10(5) Hz. In the lower frequency range (less than or equal to 10(5) Hz), sigma (1) (omega) proportional to omega (s) T-n is obeyed with s (0 to 0.51) increasing as a function of temperature and n (0.10 to 0.14) showing a very weak temperature dependence. In the higher frequency region (greater than or equal to 10(5) Hz), sigma (1)(omega) and epsilon"/epsilon (o) increase sharply leading to the quadratic behavior of sigma (1)(omega) with s equal to 2. These processes are discussed by analyzing an equivalent circuit which shows that at lower frequencies, the effects of series resistance in leads and contacts can be neglected, while at higher frequencies such effect give rise to spurious omega (2) dependance for the conductance. A weakly activated AC conductivity and a frequency exponent s that increases with increasing temperature suggest that the low frequency behavior originates from carrier migration by tunneling process.