remote plasma enhanced chemical vapor depositions (RPECVD) using organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and film formation. The deposition experiments were performed for different configurations of the radical transportation tube (straight, with a light trap, and a radical trap) to prove how the source materials are effective for the film formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bonds or Si-H bonds of the source materials, but Si-C bonds in the source will not be broken by the hydrogen radicals because of its high binding energy. As a practical application, SiC film coatings on the plastic an examined using electron cyclotron resonance (ECR) plasma system. These SIC coatings provide many advantages for the development of scratch resistivity and UV degradation resistivity for plastic materials.