화학공학소재연구정보센터
Thin Solid Films, Vol.368, No.2, 176-180, 2000
Rates of reactions of H atoms with some CVD precursors
Rate constants have been measured for the reactions of H atoms with SiH4, CH3SiH3, (CH3)(2)SiH2, (CH3)(3)SiH, GeH4, GeD4, CH3GeH3, (CH3)(2)GeH2, (CH3)(3)GeH, PH3 and AsH3, over a range of temperatures, in pulsed photolysis experiments in which H atoms were generated by the HE-sensitized photolysis (253.7 nm) of H-2 and monitored by Lyman-alpha (121.6 nm) absorption. Reactivity trends are identified and the relationship with the corresponding thermochemistry is discussed.