Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Horvath ZJ; Dozsa L; Van Tuyen V; Podor B; Nemcsics A; Frigeri P; Gombia E; Mosca R; Franchi S

Thin Solid Films, Vol.367, No.1-2, 89-92, 2000

DOI10.1016/S0040-6090(00)00701-X Export Citation

Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Horvath ZJ, Dozsa L, Van Tuyen V, Podor B, Nemcsics A, Frigeri P, Gombia E, Mosca R, Franchi S

The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well.

Keywords:LEVEL TRANSIENT SPECTROSCOPY;CAPACITANCE-VOLTAGE