In this work a simple solid-on-solid (SOS) model of inhomogeneous films epitaxial growth is presented. The results of the computer simulations based on the random deposition (RD) enriched by a local relaxation, which tends to maximize the number of a particle-particle lateral bonds (PPLB) against barriers blocking diffusion are presented. The influence of strength of the atoms interactions and barriers for diffusion on Nm roughness and possible bridges between the layers in trilayered sandwich system are considered. For magnetic layers with a non-magnetic spacer the bridging is responsible for direct magnetic coupling between layers. Also variation of the spacer thickness, when scanning the film surface is essential for uniformity of the magnetic coupling between the layers. Number of bridges for very thin spacer and variation of the spacer thickness are discussed in this work.