The feasibility of large area electrodeposition of copper indium diselenide (CIS) for solar cell applications is investigated. CIS is deposited onto 80 cm(2) of ITO/In2Se3 and Mo substrates. The uniformity of the properties of the deposits is investigated by optical transmission and photocurrent spectra. Results for a cadmium free superstrate cell with a ITO/In2Se3/CIS/Au structure are presented, in which the buffer layer and the absorber layer were successively electrodeposited. The maximum selenisation temperature must be limited to 325 degrees C to avoid pn-junction destruction which is probably caused by interdiffusion processes. The best substrate cell with a Mo/CIS/CdS/ZnO structure yielded a preliminary efficiency of 4.8%.